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dc.contributor.author강원*
dc.date.accessioned2016-08-27T02:08:34Z-
dc.date.available2016-08-27T02:08:34Z-
dc.date.issued2001*
dc.identifier.issn1098-0121*
dc.identifier.issn1550-235X*
dc.identifier.otherOAK-749*
dc.identifier.urihttps://dspace.ewha.ac.kr/handle/2015.oak/215431-
dc.description.abstractThe effects of hydrostatic pressure and magnetic field on the low-temperature conductivity of oriented polyacetylene doped with FeCl4- up to a metallic state have been investigated It was found that the conductivity at 10 kbar is greater than that at ambient pressure by a factor of 1.3. Application of pressure suppresses the resistivity minimum at 280 K and decreases the resistivity ratio rho (r)=rho (0.37 K)/rho (300 K) from 2.4 down to 1.9. The temperature dependence of resistivity rho (T)similar to In T at temperatures below 1 K at ambient pressure and at 10 kbar, which remains almost unaltered by a magnetic field up to 14 T. The starting temperature of the logarithmic temperature dependence shifts by a magnetic field up to higher temperatures. Transverse magnetoresistance (MR) was found to be negative, linear, and almost temperature-independent at temperatures below 2 K. The low temperature rho (T) and MR behavior at T<1 K observed in heavily doped polyacetylene has been attributed to weak localization. We assumed that a dramatic increase of inelastic scattering due to low-energy vibrational excitation can ascribe the stronger temperature behavior of <rho>(T) and MR at T>2 K as a result of further suppression of weak localization due to a more effective dephasing effect. At higher temperature, the resistivity decrease is dominated by activation to additional conduction paths.*
dc.languageEnglish*
dc.publisherAMER PHYSICAL SOC*
dc.titleEffects of pressure and magnetic field on the low-temperature conductivity of FeCl4--doped polyacetylene: The influence of scattering by low-energy excitations*
dc.typeArticle*
dc.relation.issue23*
dc.relation.volume63*
dc.relation.indexSCI*
dc.relation.indexSCIE*
dc.relation.indexSCOPUS*
dc.relation.journaltitlePHYSICAL REVIEW B*
dc.identifier.doi10.1103/PhysRevB.63.235209*
dc.identifier.wosidWOS:000169459300055*
dc.author.googleAleshin, AN*
dc.author.googleKim, TJ*
dc.author.googleSuh, DS*
dc.author.googlePark, YW*
dc.author.googleKang, H*
dc.author.googleKang, W*
dc.contributor.scopusid강원(7202402145)*
dc.date.modifydate20240116110212*


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