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dc.contributor.author김성진-
dc.date.accessioned2016-08-27T02:08:30Z-
dc.date.available2016-08-27T02:08:30Z-
dc.date.issued2000-
dc.identifier.issn0022-4596-
dc.identifier.otherOAK-577-
dc.identifier.urihttps://dspace.ewha.ac.kr/handle/2015.oak/215391-
dc.description.abstractThe new Zintl phase Yb5In2Sb6 was obtained from a direct element combination reaction in a sealed graphite tube at 700 degreesC and its structure was determined. It crystallizes in the orthorhombic space group Pbam (No. 55), in the Ba5Al2Bi6 structure type, with a unit cell of a = 7.3992(5) Angstrom, b = 23.001(6) Angstrom, c = 4.5139(4) Angstrom, and Z = 2, Yb5In2Sb6 has a one-dimensional structure with infinite anionic double chains (In2Sb6)(10-) separated by Yb2+ ions. Each single chain is made of corner-sharing InSb4 tetrahedra. Two such chains are bridged by Sb-2 groups to form double chains 1/infinity [In2Sb610-]. The compound satisfies the classical Zintl concept and is a narrow gap semiconductor. Band structure calculations suggest an direct band gap. Polycrystalline ingots of Yb5In2Sb6 showed electrical conductivity of 100 S/cm and a Seebeck coefficient of similar to +30 mu V/K at room temperature. The thermal conductivity of Yb5In2Sb6, is about 1.7 W/mK in the temperature range of 150-300 K. (C) 2000 Academic Press.-
dc.languageEnglish-
dc.publisherACADEMIC PRESS INC-
dc.titleYb5In2Sb6: A new rare earth zintl phase with a narrow band cap-
dc.typeArticle-
dc.relation.issue1-
dc.relation.volume155-
dc.relation.indexSCI-
dc.relation.indexSCIE-
dc.relation.indexSCOPUS-
dc.relation.startpage55-
dc.relation.lastpage61-
dc.relation.journaltitleJOURNAL OF SOLID STATE CHEMISTRY-
dc.identifier.doi10.1006/jssc.2000.8891-
dc.identifier.wosidWOS:000165595000009-
dc.author.googleKim, SJ-
dc.author.googleIreland, JR-
dc.author.googleKannewurf, CR-
dc.author.googleKanatzidis, MG-
dc.contributor.scopusid김성진(56812714700;34975057300)-
dc.date.modifydate20220119153929-
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자연과학대학 > 화학·나노과학전공 > Journal papers
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