Browsing byAuthor신형순

Jump to:
All A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
  • Sort by:
  • In order:
  • Results/Page
  • Authors/Record:

Showing results 99 to 126 of 126

Issue DateTitleAuthor(s)Type
2002New method to extract the lateral profile of hot-carrier-induced nits by using the charge pumping method신형순Conference Paper
2018New modeling method for the dielectric relaxation of a DRAM cell capacitor신형순; 선우경Article; Proceedings Paper
2021New Simulation Method for Dependency of Device Degradation on Bending Direction and Channel Length신형순; 박지선Article
2020Optimization Considerations for Short Channel Poly-Si 1T-DRAM신형순; 선우경Article
2021Optimization Method for the Memory Performance of Poly-Si 1T-DRAM유송이Master's Thesis
2019Optimization of 2D Crossbar Architecture for Synaptic-Memristor-Based Neuromorphic System김보경Master's Thesis
2014Optimization of uniaxial stress for high electron mobility on biaxially-strained n-MOSFETs신형순Article
2012Physics-based SPICE Model of Spin-Torque Oscillators임혜인Master's Thesis
2012Physics-based SPICE model of spin-torque oscillators신형순; 이승준Article
2022Poly-Si 1T-DRAM Array의 Disturbance 감소 기법 연구하예진Master's Thesis
2023Pt/Ti/TiOx/Al2O3/Pt/Ti 멤리스터 소자의 I-V 특성 구현을 위한 통합 모델정해리Master's Thesis
2002Quantum effects in CMOS devices신형순Conference Paper
2018Read margin analysis of crossbar arrays using the cell-variability-aware simulation method신형순; 선우경Article; Proceedings Paper
2002Reduction of reverse short-channel effect in high-energy implanted retrograde well신형순Conference Paper
2016ReRAM crossbar array: Reduction of access time by reducing the parasitic capacitance of the selector device신형순Article
2021Selected Bit-Line Current PUF: Implementation of Hardware Security Primitive Based on a Memristor Crossbar Array신형순Article
2014Substrate doping concentration dependence of electron mobility enhancement in uniaxial strained (110)/<110> nMOSFETs신형순Article
2013Substrate doping concentration dependence of electron mobility using the effective deformation potential in uniaxial strained nMOSFETs신형순Conference Paper
2009Surrounding Gate MOSFET의 특성 분석 및 모델링손애리Master's Thesis
2016Switching Time and Stability Evaluation for Writing Operation of STT-MRAM Crossbar Array신형순; 이승준Article
2014Temperature dependence of electron mobility in uniaxial strained nMOSFETs신형순Article
2007The 3-bit gray counter based on magnetic-tunnel-junction elements신형순; 김낙명; 이승준Conference Paper
2017The effect of a source-contacted light shield on the electrical characteristics of an LTPS TFT신형순; 선우경Article
2001Three-dimensional simulation of discrete oxide charge effects in 0.1 μm MOSFETs신형순Article
2014Unified analytical model for switching behavior of magnetic tunnel junction신형순; 이승준Article
1996Unified model for junction size, substrate doping, and energy dependence of α-particle-induced charge collection신형순Article
2012양자 효과를 고려한 단채널 Surrounding-Gate MOSFET의 I-V 특성 모델링김지현Doctoral Thesis
1995접착심지가 신사복지의 처짐관련 역학특성에 미치는 영향신형순Master's Thesis

BROWSE