Full metadata record
DC Field | Value | Language |
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dc.contributor.author | 곽준영 | - |
dc.date.accessioned | 2024-08-30T16:31:26Z | - |
dc.date.available | 2024-08-30T16:31:26Z | - |
dc.date.issued | 2024 | - |
dc.identifier.issn | 1616-301X | - |
dc.identifier.other | OAK-35464 | - |
dc.identifier.uri | https://dspace.ewha.ac.kr/handle/2015.oak/269642 | - |
dc.description.abstract | 2D MoS2 has gained attention for the post-silicon material owing to its atomically thin nature and dangling bond-free surface. The bi-layer MoS2 is considered a promising material for electronic devices due to its better electrical properties than monolayer MoS2. However, the uniform growth of bi-layer MoS2 is still challenging. Herein, the uniform growth of bi-layer MoS2 is demonstrated using gas-phase alkali metal-assisted metal–organic chemical vapor deposition (GAA-MOCVD). Thanks to enhanced metal reactant diffusion length in GAA-MOCVD, the uniform growth of bi-layer MoS2 film is achieved even at fast nucleation kinetics for a shorter growth time compared to previously reported MOCVD. The bi-layer MoS2 field-effect transistors (FETs) show superior electrical properties such as sheet conductance and electron mobility than monolayer MoS2 FETs. The electron mobility of bi-layer MoS2 FETs with bismuth contacts reaches a maximum of 92.35 cm2 V−1 s−1. Using the partially grown epitaxial bi-layer (PGEB) MoS2, it is demonstrated that a photodetector showed a near-infrared photoresponse with a low dark current that is advantageous for both monolayer and bi-layer applications. The potential expansion of the growth technique to layer-by-layer growth can result in boosted performance across a wide spectrum of electronic and optoelectronic devices employing MoS2. © 2024 Wiley-VCH GmbH. | - |
dc.description.sponsorship | John Wiley and Sons Inc | - |
dc.language | English | - |
dc.subject | 2D materials | - |
dc.subject | bi-layer growth | - |
dc.subject | gas-phase alkali metal | - |
dc.subject | metal–organic chemical vapor deposition | - |
dc.subject | transition metal dichalcogenides | - |
dc.title | Diffusion Control on the Van der Waals Surface of Monolayers for Uniform Bi-Layer MoS2 Growth | - |
dc.type | Article | - |
dc.relation.issue | 23 | - |
dc.relation.volume | 34 | - |
dc.relation.index | SCIE | - |
dc.relation.index | SCOPUS | - |
dc.relation.journaltitle | Advanced Functional Materials | - |
dc.identifier.doi | 10.1002/adfm.202312365 | - |
dc.identifier.wosid | WOS:001162709300001 | - |
dc.identifier.scopusid | 2-s2.0-85185135107 | - |
dc.author.google | Kim | - |
dc.author.google | Tae Soo | - |
dc.author.google | Noh | - |
dc.author.google | Gichang | - |
dc.author.google | Kwon | - |
dc.author.google | Seongdae | - |
dc.author.google | Ji Yoon | - |
dc.author.google | Dhakal | - |
dc.author.google | Krishna P. | - |
dc.author.google | Oh | - |
dc.author.google | Saeyoung | - |
dc.author.google | Chai | - |
dc.author.google | Hyun-Jun | - |
dc.author.google | Park | - |
dc.author.google | Eunpyo | - |
dc.author.google | In Soo | - |
dc.author.google | Lee | - |
dc.author.google | Eunji | - |
dc.author.google | Youngbum | - |
dc.author.google | Jaehyun | - |
dc.author.google | Jo | - |
dc.author.google | Min-kyung | - |
dc.author.google | Kang | - |
dc.author.google | Minsoo | - |
dc.author.google | Cheolmin | - |
dc.author.google | Jeongho | - |
dc.author.google | Jeongwon | - |
dc.author.google | Suhyun | - |
dc.author.google | Mingyu | - |
dc.author.google | Yuseok | - |
dc.author.google | Choi | - |
dc.author.google | Sung-Yool | - |
dc.author.google | Song | - |
dc.author.google | Seungwoo | - |
dc.author.google | Jeong | - |
dc.author.google | Hu Young | - |
dc.author.google | Jeongyong | - |
dc.author.google | Kwak | - |
dc.author.google | Joon Young | - |
dc.author.google | Kibum | - |
dc.date.modifydate | 20240830140539 | - |