Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 이병훈 | * |
dc.date.accessioned | 2024-02-15T05:11:58Z | - |
dc.date.available | 2024-02-15T05:11:58Z | - |
dc.date.issued | 2023 | * |
dc.identifier.issn | 0897-4756 | * |
dc.identifier.other | OAK-34429 | * |
dc.identifier.uri | https://dspace.ewha.ac.kr/handle/2015.oak/267820 | - |
dc.description.abstract | Polymer semiconductors with hysteresis-free ambipolar charge transport characteristics are key elements for developing high-performance organic field-effect transistors and circuits. In this study, a new and facile strategy of simply reconfiguring the donor (D) and acceptor (A) moieties in the order D-A-A-D in the repeat units was proposed to prepare D-A-type polymer semiconductors with enhanced electron and hole mobilities and hysteresis-free transistor characteristics. In contrast to the conventional D-A-type polymer semiconductor based on cyclopentadithiophene (CDT) and pyridyl-2,1,3-thiadiazole (PT) (hereafter, PCDTPT), the newly developed polymer with CDT-PT-PT-CDT configuration (hereafter, PCPPC) exhibited hysteresis-free transistor characteristics and enhanced electron and hole mobilities of 0.41 and 1.50 cm2 V-1 s-1, respectively. Such improvements were attributed to the deepened conduction band edge of PCPPC compared with that of its D-A-type counterpart, PCDTPT. Owing to the improved ambipolar charge-transport characteristics, the organic complementary metal-oxide semiconductor inverters fabricated with the PCPPC charge transporting layers exhibited a remarkably high gain of greater than 165. Our results provided a simple but effective strategy for designing high-performance ambipolar polymer semiconductors. © 2023 American Chemical Society. | * |
dc.language | English | * |
dc.publisher | American Chemical Society | * |
dc.title | Ambipolar Charge Transport in p-Type Cyclopentadithiophene-Based Polymer Semiconductors Enabled by D-A-A-D Configuration | * |
dc.type | Article | * |
dc.relation.issue | 22 | * |
dc.relation.volume | 35 | * |
dc.relation.index | SCIE | * |
dc.relation.index | SCOPUS | * |
dc.relation.startpage | 9562 | * |
dc.relation.lastpage | 9571 | * |
dc.relation.journaltitle | Chemistry of Materials | * |
dc.identifier.doi | 10.1021/acs.chemmater.3c01570 | * |
dc.identifier.wosid | WOS:001110544400001 | * |
dc.identifier.scopusid | 2-s2.0-85178105656 | * |
dc.author.google | Yoo | * |
dc.author.google | Hyeonjin | * |
dc.author.google | Sung | * |
dc.author.google | Mingi | * |
dc.author.google | Ahn | * |
dc.author.google | Hyungju | * |
dc.author.google | Yang | * |
dc.author.google | Dohyun | * |
dc.author.google | Jin Soo | * |
dc.author.google | Lee | * |
dc.author.google | Junghoon | * |
dc.author.google | Byoung Hoon | * |
dc.contributor.scopusid | 이병훈(57001618200) | * |
dc.date.modifydate | 20240322131001 | * |