Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 이병훈 | * |
dc.date.accessioned | 2021-11-16T16:31:43Z | - |
dc.date.available | 2021-11-16T16:31:43Z | - |
dc.date.issued | 2021 | * |
dc.identifier.issn | 2050-7534 | * |
dc.identifier.other | OAK-30492 | * |
dc.identifier.uri | https://dspace.ewha.ac.kr/handle/2015.oak/259506 | - |
dc.description.abstract | In the past decade, various high-performing π-conjugated polymers based on axisymmetric cyclopentadithiophene (CDT) and centrosymmetric indacenodithiophene (IDT) units have been thoroughly studied for use in organic field-effect transistors. However, no comparative set of data between CDT- and IDT-based polymers is available with a focus on relevant change in optoelectronic and morphological properties. Herein, we report the synthesis and characterization of four regioregular, well-defined donor-acceptor polymers (P1-P4), comprising different compositions of CDT and IDT donors in conjugation with the asymmetric 5-fluoro-2,1,3-benzothiadiazole acceptor that is precisely oriented in the regular pattern along the backbone. Morphological analyses of the above polymer series show that exclusive CDT donor-containingP1is semicrystalline, whereas the others (IDT donor-containing ones) are near-amorphous in nature. Comparatively, IDT donor-containing polymers have superior hole mobilities; in particular, exclusive IDT donor-containing polymerP4offers a high mobility of 1.67 cm2V−1s−1. In addition, the near-amorphous characteristics render the IDT donor-containing polymer films highly ductile and stretchable. Such superior features, which are associated with excellent charge transport and ductility, demonstrate a promising possibility for application in viable stretchable electronics. © The Royal Society of Chemistry 2021. | * |
dc.language | English | * |
dc.publisher | Royal Society of Chemistry | * |
dc.title | Regioregular, yet ductile and amorphous indacenodithiophene-based polymers with high-mobility for stretchable plastic transistors | * |
dc.type | Article | * |
dc.relation.issue | 30 | * |
dc.relation.volume | 9 | * |
dc.relation.index | SCOPUS | * |
dc.relation.startpage | 9670 | * |
dc.relation.lastpage | 9682 | * |
dc.relation.journaltitle | Journal of Materials Chemistry C | * |
dc.identifier.doi | 10.1039/d1tc01984h | * |
dc.identifier.scopusid | 2-s2.0-85112655693 | * |
dc.author.google | Cho Y. | * |
dc.author.google | Park S. | * |
dc.author.google | Jeong S. | * |
dc.author.google | Yang H. | * |
dc.author.google | Lee B. | * |
dc.author.google | Lee S.M. | * |
dc.author.google | Lee B.H. | * |
dc.author.google | Yang C. | * |
dc.contributor.scopusid | 이병훈(57001618200) | * |
dc.date.modifydate | 20240322131001 | * |