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Long-Range Lattice Engineering of MoTe2 by a 2D Electride
- Title
- Long-Range Lattice Engineering of MoTe2 by a 2D Electride
- Authors
- Kim, Sera; Song, Seunghyun; Park, Jongho; Yu, Ho Sung; Cho, Suyeon; Kim, Dohyun; Baik, Jaeyoon; Choe, Duk-Hyun; Chang, K. J.; Lee, Young Hee; Kim, Sung Wng; Yang, Heejun
- Ewha Authors
- 조수연
- SCOPUS Author ID
- 조수연
- Issue Date
- 2017
- Journal Title
- NANO LETTERS
- ISSN
- 1530-6984
1530-6992
- Citation
- NANO LETTERS vol. 17, no. 6, pp. 3363 - 3368
- Keywords
- MoTe2; electride; doping; phase transition; electron diffusion; work function
- Publisher
- AMER CHEMICAL SOC
- Indexed
- SCIE; SCOPUS
- Document Type
- Article
- Abstract
- Doping two-dimensional (2D) semiconductors beyond their degenerate levels provides the opportunity to investigate extreme carrier density-driven superconductivity and phase transition in 2D systems. Chemical functionalization and the ionic gating have achieved the high doping density, but their effective ranges have been limited to similar to 1 nm, which restricts the use of highly doped 2D semiconductors. Here, we report on electron diffusion from the 2D electride [Ca2N](+)e to MoTe2 over a distance of 100 nm from the contact interface, generating an electron doping density higher than 1.6 x 10(14) cm(2) and a lattice symmetry change of MoTe2 as a consequence of the extreme doping. The long-range lattice symmetry change, suggesting a length scale surpassing the depletion width of conventional metalsemiconductor junctions, was a consequence of the low work function (2.6 eV) with highly mobile anionic electron layers of [Ca2N](+)e . The combination of 2D electrides and layered materials yields a novel material design in terms of doping and lattice engineering.
- DOI
- 10.1021/acs.nanolett.6b05199
- Appears in Collections:
- 공과대학 > 화공신소재공학과 > Journal papers
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