Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김우재 | * |
dc.date.accessioned | 2019-10-29T16:30:29Z | - |
dc.date.available | 2019-10-29T16:30:29Z | - |
dc.date.issued | 2019 | * |
dc.identifier.issn | 0021-9606 | * |
dc.identifier.issn | 1089-7690 | * |
dc.identifier.other | OAK-25541 | * |
dc.identifier.uri | https://dspace.ewha.ac.kr/handle/2015.oak/251654 | - |
dc.description.abstract | Colloidal InP quantum dots (QDs) have attracted a surge of interest as environmentally friendly light-emitters in downconversion liquid crystal displays and light-emitting diodes (LEDs). A ZnS shell on InP-based core QDs has helped achieve high photoluminescence (PL) quantum yield (QY) and stability. Yet, due to the difficulty in the growth of a thick ZnS shell without crystalline defects, InP-based core/shell QDs show inferior stability against QY drop compared to Cd chalcogenide precedents, e.g., CdSe/CdS core/thick-shell QDs. In this work, we demonstrate the synthesis of InP-based core/shell QDs coated with an Al-doped ZnS outer shell. QDs with an Al-doped shell exhibit remarkable improvement in thermal and air stability even when the shell thickness is below 2 nm, while the absorption and PL spectra, size, and crystal structure are nearly the same as the case of QDs with a pristine ZnS shell. X-ray photoelectron spectroscopy reveals that Al3+ in Al-doped QDs forms an Al-oxide layer at elevated temperature under ambient atmosphere. The as-formed Al-oxide layer blocks the access of external oxidative species penetrating into QDs and prevents QDs from oxidative degradation. We also trace the chemical pathway of the incorporation of Al3+ into ZnS lattice during the shell growth. Furthermore, we fabricate QD-LEDs using Al-doped and undoped QDs and compare the optoelectronic characteristics and stability. | * |
dc.language | English | * |
dc.publisher | AMER INST PHYSICS | * |
dc.title | Enhanced thermal stability of InP quantum dots coated with Al-doped ZnS shell | * |
dc.type | Article | * |
dc.relation.issue | 14 | * |
dc.relation.volume | 151 | * |
dc.relation.index | SCIE | * |
dc.relation.index | SCOPUS | * |
dc.relation.journaltitle | JOURNAL OF CHEMICAL PHYSICS | * |
dc.identifier.doi | 10.1063/1.5121619 | * |
dc.identifier.wosid | WOS:000500356200040 | * |
dc.identifier.scopusid | 2-s2.0-85073217212 | * |
dc.author.google | Koh, Sungjun | * |
dc.author.google | Lee, Hyeonjun | * |
dc.author.google | Lee, Taemin | * |
dc.author.google | Park, Kyoungwon | * |
dc.author.google | Kim, Woo-Jae | * |
dc.author.google | Lee, Doh C. | * |
dc.contributor.scopusid | 김우재(34770324900) | * |
dc.date.modifydate | 20240322131035 | * |