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dc.contributor.author김우재-
dc.date.accessioned2019-10-29T16:30:29Z-
dc.date.available2019-10-29T16:30:29Z-
dc.date.issued2019-
dc.identifier.issn0021-9606-
dc.identifier.issn1089-7690-
dc.identifier.otherOAK-25541-
dc.identifier.urihttp://dspace.ewha.ac.kr/handle/2015.oak/251654-
dc.description.abstractColloidal InP quantum dots (QDs) have attracted a surge of interest as environmentally friendly light-emitters in downconversion liquid crystal displays and light-emitting diodes (LEDs). A ZnS shell on InP-based core QDs has helped achieve high photoluminescence (PL) quantum yield (QY) and stability. Yet, due to the difficulty in the growth of a thick ZnS shell without crystalline defects, InP-based core/shell QDs show inferior stability against QY drop compared to Cd chalcogenide precedents, e.g., CdSe/CdS core/thick-shell QDs. In this work, we demonstrate the synthesis of InP-based core/shell QDs coated with an Al-doped ZnS outer shell. QDs with an Al-doped shell exhibit remarkable improvement in thermal and air stability even when the shell thickness is below 2 nm, while the absorption and PL spectra, size, and crystal structure are nearly the same as the case of QDs with a pristine ZnS shell. X-ray photoelectron spectroscopy reveals that Al3+ in Al-doped QDs forms an Al-oxide layer at elevated temperature under ambient atmosphere. The as-formed Al-oxide layer blocks the access of external oxidative species penetrating into QDs and prevents QDs from oxidative degradation. We also trace the chemical pathway of the incorporation of Al3+ into ZnS lattice during the shell growth. Furthermore, we fabricate QD-LEDs using Al-doped and undoped QDs and compare the optoelectronic characteristics and stability.-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.titleEnhanced thermal stability of InP quantum dots coated with Al-doped ZnS shell-
dc.typeArticle-
dc.relation.issue14-
dc.relation.volume151-
dc.relation.indexSCIE-
dc.relation.indexSCOPUS-
dc.relation.journaltitleJOURNAL OF CHEMICAL PHYSICS-
dc.identifier.doi10.1063/1.5121619-
dc.identifier.wosidWOS:000500356200040-
dc.identifier.scopusid2-s2.0-85073217212-
dc.author.googleKoh, Sungjun-
dc.author.googleLee, Hyeonjun-
dc.author.googleLee, Taemin-
dc.author.googlePark, Kyoungwon-
dc.author.googleKim, Woo-Jae-
dc.author.googleLee, Doh C.-
dc.date.modifydate20200218154831-
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엘텍공과대학 > 화학신소재공학전공 > Journal papers
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