Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 신형순 | * |
dc.contributor.author | 선우경 | * |
dc.date.accessioned | 2019-10-04T16:30:12Z | - |
dc.date.available | 2019-10-04T16:30:12Z | - |
dc.date.issued | 2019 | * |
dc.identifier.issn | 0268-1242 | * |
dc.identifier.issn | 1361-6641 | * |
dc.identifier.other | OAK-25451 | * |
dc.identifier.uri | https://dspace.ewha.ac.kr/handle/2015.oak/251586 | - |
dc.description.abstract | Capacitorless DRAM (1T-DRAM) is considered to be a promising candidate to replace conventional 1T-1C DRAM which is facing a scaling limit. 1T-DRAM with a poly-Si body has attracted much attention specifically for its simple SOI fabrication and stackable memory which allow for ultrahigh density. A single crystal silicon-based junctionless (JL) transistor is unsuitable for a 1T-DRAM cell because the transistor's body is too thin to have a storage region and its junction barrier is too low to store holes. In contrast, a JL transistor with a thin poly-Si body can be used as a 1T-DRAM cell because it uses a grain boundary as its charge storage region instead of a floating body. We carried out intensive simulations of JL transistors with poly-Si body and confirmed the possibility of using a JL structure as a poly-Si 1T-DRAM cell. In addition, we analyzed the memory mechanism and characteristics of this structure. | * |
dc.language | English | * |
dc.publisher | IOP PUBLISHING LTD | * |
dc.subject | capacitorless DRAM | * |
dc.subject | grain boundary | * |
dc.subject | poly-Si 1T-DRAM | * |
dc.subject | junctionless (JL) transistor | * |
dc.title | Analysis of operation characteristics of junctionless poly-Si 1T-DRAM in accumulation mode | * |
dc.type | Article | * |
dc.relation.issue | 10 | * |
dc.relation.volume | 34 | * |
dc.relation.index | SCIE | * |
dc.relation.index | SCOPUS | * |
dc.relation.journaltitle | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | * |
dc.identifier.doi | 10.1088/1361-6641/ab3a07 | * |
dc.identifier.wosid | WOS:000485673500004 | * |
dc.author.google | Kim, Hyeonjeong | * |
dc.author.google | Kang, In Man | * |
dc.author.google | Cho, Seongjae | * |
dc.author.google | Sun, Wookyung | * |
dc.author.google | Shin, Hyungsoon | * |
dc.contributor.scopusid | 신형순(7404012125) | * |
dc.contributor.scopusid | 선우경(7404011223) | * |
dc.date.modifydate | 20240322125227 | * |