View : 856 Download: 0

Full metadata record

DC Field Value Language
dc.contributor.author신형순*
dc.contributor.author선우경*
dc.date.accessioned2019-10-04T16:30:12Z-
dc.date.available2019-10-04T16:30:12Z-
dc.date.issued2019*
dc.identifier.issn0268-1242*
dc.identifier.issn1361-6641*
dc.identifier.otherOAK-25451*
dc.identifier.urihttps://dspace.ewha.ac.kr/handle/2015.oak/251586-
dc.description.abstractCapacitorless DRAM (1T-DRAM) is considered to be a promising candidate to replace conventional 1T-1C DRAM which is facing a scaling limit. 1T-DRAM with a poly-Si body has attracted much attention specifically for its simple SOI fabrication and stackable memory which allow for ultrahigh density. A single crystal silicon-based junctionless (JL) transistor is unsuitable for a 1T-DRAM cell because the transistor's body is too thin to have a storage region and its junction barrier is too low to store holes. In contrast, a JL transistor with a thin poly-Si body can be used as a 1T-DRAM cell because it uses a grain boundary as its charge storage region instead of a floating body. We carried out intensive simulations of JL transistors with poly-Si body and confirmed the possibility of using a JL structure as a poly-Si 1T-DRAM cell. In addition, we analyzed the memory mechanism and characteristics of this structure.*
dc.languageEnglish*
dc.publisherIOP PUBLISHING LTD*
dc.subjectcapacitorless DRAM*
dc.subjectgrain boundary*
dc.subjectpoly-Si 1T-DRAM*
dc.subjectjunctionless (JL) transistor*
dc.titleAnalysis of operation characteristics of junctionless poly-Si 1T-DRAM in accumulation mode*
dc.typeArticle*
dc.relation.issue10*
dc.relation.volume34*
dc.relation.indexSCIE*
dc.relation.indexSCOPUS*
dc.relation.journaltitleSEMICONDUCTOR SCIENCE AND TECHNOLOGY*
dc.identifier.doi10.1088/1361-6641/ab3a07*
dc.identifier.wosidWOS:000485673500004*
dc.author.googleKim, Hyeonjeong*
dc.author.googleKang, In Man*
dc.author.googleCho, Seongjae*
dc.author.googleSun, Wookyung*
dc.author.googleShin, Hyungsoon*
dc.contributor.scopusid신형순(7404012125)*
dc.contributor.scopusid선우경(7404011223)*
dc.date.modifydate20240322125227*
Appears in Collections:
공과대학 > 전자전기공학전공 > Journal papers
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

BROWSE