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Directional Ostwald Ripening for Producing Aligned Arrays of Nanowires

Title
Directional Ostwald Ripening for Producing Aligned Arrays of Nanowires
Authors
Lee H.J.Yang U.J.Kim K.N.Park S.Kil K.H.Kim J.S.Wodtke A.M.Choi W.J.Kim M.H.Baik J.M.
Ewha Authors
김명화김준수
SCOPUS Author ID
김명화scopus; 김준수scopus
Issue Date
2019
Journal Title
Nano letters
ISSN
1530-6992JCR Link
Citation
Nano letters vol. 19, no. 7, pp. 4306 - 4313
Keywords
directional Ostwald ripeningLennard−Jones potentialself-alignedstrain sensorsVO nanowires
Publisher
NLM (Medline)
Indexed
SCIE; SCOPUS WOS scopus
Document Type
Article
Abstract
The remarkable electronic and mechanical properties of nanowires have great potential for fascinating applications; however, the difficulties of assembling ordered arrays of aligned nanowires over large areas prevent their integration into many practical devices. In this paper, we show that aligned VO2 nanowires form spontaneously after heating a thin V2O5 film on a grooved SiO2 surface. Nanowires grow after complete dewetting of the film, after which there is the formation of supercooled nanodroplets and subsequent Ostwald ripening and coalescence. We investigate the growth mechanism using molecular dynamics simulations of spherical Lennard-Jones particles, and the simulations help explain how the grooved surface produces aligned nanowires. Using this simple synthesis approach, we produce self-aligned, millimeter-long nanowire arrays with uniform metal-insulator transition properties; after their transfer to a polymer substrate, the nanowires act as a highly sensitive array of strain sensors with a very fast response time of several tens of milliseconds.
DOI
10.1021/acs.nanolett.9b00684
Appears in Collections:
자연과학대학 > 화학·나노과학전공 > Journal papers
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