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Ultimate limit in size and performance of WSe2 vertical diodes

Title
Ultimate limit in size and performance of WSe2 vertical diodes
Authors
Nazir, GhazanfarKim, HakseongKim, JihwanKim, Kyoung SooShin, Dong HoonKhan, Muhammad FarooqLee, Dong SuHwang, Jun YeonHwang, ChanyongSuh, JunhoEom, JonghwaJung, Suyong
Ewha Authors
신동훈
SCOPUS Author ID
신동훈scopus
Issue Date
2018
Journal Title
NATURE COMMUNICATIONS
ISSN
2041-1723JCR Link
Citation
NATURE COMMUNICATIONS vol. 9
Publisher
NATURE PUBLISHING GROUP
Indexed
SCI; SCIE; SCOPUS WOS
Document Type
Article
Abstract
Precise doping-profile engineering in van der Waals heterostructures is a key element to promote optimal device performance in various electrical and optical applications with twodimensional layered materials. Here, we report tungsten diselenide-(WSe2) based pure vertical diodes with atomically defined p-, i- and n-channel regions. Externally modulated p-and n-doped layers are respectively formed on the bottom and the top facets of WSe2 single crystals by direct evaporations of high and low work-function metals platinum and gadolinium, thus forming atomically sharp p-i-n heterojunctions in the homogeneous WSe2 layers. As the number of layers increases, charge transport through the vertical WSe2 p-i-n heterojunctions is characterized by a series of quantum tunneling events; direct tunneling, Fowler-Nordheim tunneling, and Schottky emission tunneling. With optimally selected WSe2 thickness, our vertical heterojunctions show superb diode characteristics of an unprecedentedly high current density and low turn-on voltages while maintaining good current rectification.
DOI
10.1038/s41467-018-07820-8
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자연과학대학 > 물리학전공 > Journal papers
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