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Facile Fabrication of a Two-Dimensional TMD/Si Heterojunction Photodiode by Atmospheric-Pressure Plasma-Enhanced Chemical Vapor Deposition

Title
Facile Fabrication of a Two-Dimensional TMD/Si Heterojunction Photodiode by Atmospheric-Pressure Plasma-Enhanced Chemical Vapor Deposition
Authors
Kim, YonghunKwon, SoyeongSeo, Eun-JooNam, Jae HyeonJang, Hye YeonKwon, Se-HunKwon, Jung-DaeKim, Dong-WookCho, Byungjin
Ewha Authors
김동욱
SCOPUS Author ID
김동욱scopus
Issue Date
2018
Journal Title
ACS APPLIED MATERIALS & INTERFACES
ISSN
1944-8244JCR Link
Citation
ACS APPLIED MATERIALS & INTERFACES vol. 10, no. 42, pp. 36136 - 36143
Keywords
two-dimensional materialsMoS2photodetectorsheterojunctionsAP-PECVD
Publisher
AMER CHEMICAL SOC
Indexed
SCI; SCIE; SCOPUS WOS scopus
Document Type
Article
Abstract
A growth technique to directly prepare two-dimensional (2D) materials onto conventional semiconductor substrates, enabling low-temperature, high-throughput, and large-area capability, is needed to realize competitive 2D transition-metal dichalcogenide (TMD)/three-dimensional (3D) semiconductor heterojunction devices. Therefore, we herein successfully developed an atmospheric-pressure plasma-enhanced chemical vapor deposition (AP-PECVD) technique, which could grow MoS2 and WS2 multilayers directly onto PET flexible substrate as well as 4-in. Si substrates at temperatures of <200 degrees C. The as-fabricated MoS2/Si and WS2/Si heterojunctions exhibited large and fast photocurrent responses under illumination of a green light. The measured photocurrent was linearly proportional to the laser power, indicating that trapping and detrapping of the photogenerated carriers at defect states could not significantly suppress the collection of photocarriers. All the results demonstrated that our AP-PECVD method could produce high-quality TMD/Si 2D-3D heterojunctions for optoelectronic applications.
DOI
10.1021/acsami.8b12896
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자연과학대학 > 물리학전공 > Journal papers
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