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Low-temperature growth and electronic structures of ambipolar Yb-doped zinc tin oxide transparent thin films

Title
Low-temperature growth and electronic structures of ambipolar Yb-doped zinc tin oxide transparent thin films
Authors
Oh S.H.Ferblantier G.Park Y.S.Schmerber G.Dinia A.Slaoui A.Jo W.
Ewha Authors
조윌렴
SCOPUS Author ID
조윌렴scopus
Issue Date
2018
Journal Title
Applied Surface Science
ISSN
0169-4332JCR Link
Citation
Applied Surface Science vol. 441, pp. 49 - 54
Keywords
Amorphous oxide thin filmsCompositional dependenceHall measurementKelvin probe force microscopyTransparent conducting oxideZinc tin oxides
Publisher
Elsevier B.V.
Indexed
SCI; SCIE; SCOPUS WOS scopus
Document Type
Article
Abstract
The compositional dependence of the crystal structure, optical transmittance, and surface electric properties of the zinc tin oxide (Zn-Sn-O, shortened ZTO) thin films were investigated. ZTO thin films with different compositional ratios were fabricated on glass and p-silicon wafers using radio frequency magnetron sputtering. The binding energy of amorphous ZTO thin films was examined by a X-ray photoelectron spectroscopy. The optical transmittance over 70% in the visible region for all the ZTO films was observed. The optical band gap of the ZTO films was changed as a result of the competition between the Burstein-Moss effect and renormalization. An electron concentration in the films and surface work function distribution were measured by a Hall measurement and Kelvin probe force microscopy, respectively. The mobility of the n- and p-type ZTO thin films have more than 130 cm2/V s and 15 cm2/V s, respectively. We finally constructed the band structure which contains band gap, work function, and band edges such as valence band maximum and conduction band minimum of ZTO thin films. The present study results suggest that the ZTO thin film is competitive compared with the indium tin oxide, which is a representative material of the transparent conducting oxides, regarding optoelectronic devices applications. © 2018 Elsevier B.V.
DOI
10.1016/j.apsusc.2018.02.011
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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