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dc.contributor.author조수연*
dc.date.accessioned2018-11-21T16:30:16Z-
dc.date.available2018-11-21T16:30:16Z-
dc.date.issued2018*
dc.identifier.issn2045-2322*
dc.identifier.otherOAK-23046*
dc.identifier.urihttps://dspace.ewha.ac.kr/handle/2015.oak/246690-
dc.description.abstractThe recent observation of extremely large magnetoresistance (MR) in the transition-metal dichalcogenide MoTe2 has attracted considerable interest due to its potential technological applications as well as its relationship with novel electronic states predicted for a candidate type-II Weyl semimetal. In order to understand the origin of the MR, the electronic structure of MoTe2-x (x = 0.08) is systematically tuned by application of pressure and probed via its Hall and longitudinal conductivities. With increasing pressure, a monoclinic-to-orthorhombic (1T' to T-d) structural phase transition temperature (T*) gradually decreases from 210 K at 1 bar to 58 K at 1.1 GPa, and there is no anomaly associated with the phase transition at 1.4 GPa, indicating that a T = 0 K quantum phase transition occurs at a critical pressure (P-c) between 1.1 and 1.4 GPa. The large MR observed at 1 bar is suppressed with increasing pressure and is almost saturated at 100% for P > P-c. The dependence on magnetic field of the Hall and longitudinal conductivities of MoTe2-x shows that a pair of electron and hole bands are important in the low-pressure T-d phase, while another pair of electron and hole bands are additionally required in the high-pressure 1T' phase. The MR peaks at a characteristic hole-to-electron concentration ratio (n(c)) and is sharply suppressed when the ratio deviates from n(c) within the T-d phase. These results establish the comprehensive temperature-pressure phase diagram of MoTe2-x and underscore that its MR originates from balanced electron-hole carrier concentrations.*
dc.languageEnglish*
dc.publisherNATURE PUBLISHING GROUP*
dc.titleOrigin of extremely large magnetoresistance in the candidate type-II Weyl semimetal MoTe2-x*
dc.typeArticle*
dc.relation.volume8*
dc.relation.indexSCIE*
dc.relation.indexSCOPUS*
dc.relation.journaltitleSCIENTIFIC REPORTS*
dc.identifier.doi10.1038/s41598-018-32387-1*
dc.identifier.wosidWOS:000444763500001*
dc.identifier.scopusid2-s2.0-85053420830*
dc.author.googleLee, Sangyun*
dc.author.googleJang, Jaekyung*
dc.author.googleKim, Sung-Il*
dc.author.googleJung, Soon-Gil*
dc.author.googleKim, Jihyun*
dc.author.googleCho, Suyeon*
dc.author.googleKim, Sung Wng*
dc.author.googleRhee, Joo Yull*
dc.author.googlePark, Kee-Su*
dc.author.googlePark, Tuson*
dc.contributor.scopusid조수연(55772631700)*
dc.date.modifydate20240322131012*


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