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Electrical Properties of Au/n-GaN Schottky Junctions with an Atomic-Layer-Deposited Al2O3 Interlayer

Title
Electrical Properties of Au/n-GaN Schottky Junctions with an Atomic-Layer-Deposited Al2O3 Interlayer
Authors
Kim, HogyoungCho, YunaeKim, Dong-WookKim, Dong HaKim, YongChoi, Byung Joon
Ewha Authors
김동욱
SCOPUS Author ID
김동욱scopus
Issue Date
2018
Journal Title
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
ISSN
0374-4884JCR Link1976-8524JCR Link
Citation
vol. 73, no. 3, pp. 349 - 354
Keywords
GaNAtomic layer depositionSurface statesBarrier height
Publisher
KOREAN PHYSICAL SOC
Indexed
SCI; SCIE; SCOPUS; KCI WOS
Abstract
The temperature-dependent electrical properties of Au/GaN Schottky diodes with an Al2O3 layer prepared by using atomic layer deposition (ALD) were investigated. Compared to the Au/GaN junction, the Au/Al2O3/GaN junction was found to have lower barrier heights and higher ideality factors. For the Au/GaN junction, the native oxide and the thin surface barrier formed by surface states caused a large leakage current and a small capacitance. Due to surface passivation through the ALD process, the leakage current for the Au/Al2O3/GaN junction was reduced. The barrier height reduction for the Au/Al2O3/GaN junction was associated with interface dipole formation at the Al2O3/GaN interface.
DOI
10.3938/jkps.73.349
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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