NL repository
menu
검색
Library
Browse
Communities & Collections
By Date
Authors
Titles
Subject
My Repository
My Account
Receive email updates
Edit Profile
DSpace at EWHA
자연과학대학
물리학전공
Journal papers
View : 614 Download: 545
Segregation of oxygen vacancy at metal-HfO2 interfaces
Title
Segregation of oxygen vacancy at metal-HfO2 interfaces
Authors
Cho E.
;
Lee B.
;
Lee C.-K.
;
Han S.
;
Jeon S.H.
;
Park B.H.
;
Kim Y.-S.
Ewha Authors
한승우
SCOPUS Author ID
한승우
Issue Date
2008
Journal Title
Applied Physics Letters
ISSN
0003-6951
Citation
Applied Physics Letters vol. 92, no. 23
Indexed
SCI; SCIE; SCOPUS
Document Type
Article
Abstract
We perform first-principles calculations on metal-HfO2 interfaces in the presence of oxygen vacancies. Pt, Al, Ti, and Ag are considered as electrodes. It is found that oxygen vacancies are strongly attracted to the interface with binding energies of up to several eVs. In addition, the vacancy affinity of interfaces is proportional to the work function of metals, which is understood by the transition level of the vacancy and metal-Hf bonding. Interfacial segregation of vacancies significantly affects effective work functions of p metals. Our results are consistent with flatband shifts in p-type field effect transistors employing high- k dielectrics and metal gates. © 2008 American Institute of Physics.
DOI
10.1063/1.2943322
Appears in Collections:
자연과학대학
>
물리학전공
>
Journal papers
Files in This Item:
Segregation of oxygen vacancy.pdf
(1.11 MB)
Download
Export
RIS (EndNote)
XLS (Excel)
XML
Show full item record
Find@EWHA
트윗하기
BROWSE
Communities & Collections
By Date
Authors
Titles
Subject