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Field emission of doped carbon nanotubes

Title
Field emission of doped carbon nanotubes
Authors
Ahn H.-S.Lee K.-R.Kim D.-Y.Han S.
Ewha Authors
한승우
SCOPUS Author ID
한승우scopus
Issue Date
2006
Journal Title
Applied Physics Letters
ISSN
0003-6951JCR Link
Citation
Applied Physics Letters vol. 88, no. 9
Indexed
SCI; SCIE; SCOPUS WOS scopus
Document Type
Article
Abstract
We calculated field-emission currents from nitrogen- and boron-doped single-walled (5,5) carbon nanotubes by integrating time-dependent Schrödinger equations. Nitrogen doping increased the emission current owing to a shift in the energy level of a localized state to the Fermi level, and the creation of coupled states that have characteristics of both localized and extended states. On the other hand, boron doping had an opposite effect on the electronic structure by increasing the energy level of the localized state. The calculated emission currents of the boron-doped carbon nanotube fluctuated depending on the doping site and the external electric field. © 2006 American Institute of Physics.
DOI
10.1063/1.2180444
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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