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Fabrication of Nb-doped bismuth titanate thin films using nonionic block copolymer: Enhanced ferroelectric properties

Title
Fabrication of Nb-doped bismuth titanate thin films using nonionic block copolymer: Enhanced ferroelectric properties
Authors
Kim J.K.Lee H.S.Kim J.
Ewha Authors
김진흥
SCOPUS Author ID
김진흥scopus
Issue Date
2006
Journal Title
Materials Letters
ISSN
0167-577XJCR Link
Citation
Materials Letters vol. 60, no. 17-18, pp. 2090 - 2093
Indexed
SCI; SCIE; SCOPUS WOS scopus
Document Type
Article
Abstract
Crack-free Nb-doped Bi4Ti3O12 (Nb-BIT-p) ferroelectric thin films were fabricated utilizing nonionic block copolymer, HO(CH2CH2O)20(CH(CH3)CH2O)70(CH2CH2O)20H (EO20PO70EO20), on Pt/Ti/SiO2/Si substrates by a processing route of metalorganic solution deposition. The Nb-BIT-p films after calcination showed only a Bi4Ti3O12-type crystalline phase with a random orientation and small grains (< 0.4 μm). The remanent polarization (2Pr) and the coercive field (Ec) values of Nb-BIT-p capacitors were unusually high, such as 42 ± 3 μC/cm2 and 72 ± 5 kV/cm, respectively, at a maximum applied field of 160 kV/cm. After 1.5 × 1010 read/write cycles with ± 8 V amplitude (160 kV/cm) at 1 MHz frequency, the 2Pr value was partially reduced, but recoverable close to the original one by repeated switching at a high field. © 2005 Elsevier B.V. All rights reserved.
DOI
10.1016/j.matlet.2005.12.081
Appears in Collections:
자연과학대학 > 화학·나노과학전공 > Journal papers
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