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Revealing impact of plasma condition on graphite nanostructures and effective charge doping of graphene

Title
Revealing impact of plasma condition on graphite nanostructures and effective charge doping of graphene
Authors
Lee B.-J.Shin D.-H.Lee S.Jeong G.-H.
Ewha Authors
이상욱신동훈
SCOPUS Author ID
이상욱scopus; 신동훈scopus
Issue Date
2017
Journal Title
Carbon
ISSN
0008-6223JCR Link
Citation
vol. 123, pp. 174 - 185
Publisher
Elsevier Ltd
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
It is difficult to achieve effective doping without inducing structural damage in plasma-assisted processes. In this study, we demonstrate the effects of the plasma condition on the doping and defect formation in graphene. Direct-current ammonia plasma with parallel electrodes is used. We change the electrode configuration and adjust the plasma input power and treatment time to utilize various ion-bombardment energies and plasma doses. The up-cathode system with a powered upper electrode and ground lower anode is more suitable than the traditional down-cathode system for plasma doping. This configuration yields a low-energy ion process and thus suppresses high-energy ion-induced damages. The plasma condition of 0.45 W of power and exposure for 10 s is the most appropriate for doping. The doping level is estimated as 1.80×1012 and 2.07×1012cm−2 according to Raman analysis and electrical characterization, respectively. The structural evolution of graphene and the doping components are investigated via Raman spectroscopy, atomic force microscopy, and X-ray photoelectron spectroscopy. The results provide an effective doping condition for doping nanomaterials without plasma-induced damage. © 2017 Elsevier Ltd
DOI
10.1016/j.carbon.2017.07.059
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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