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A Guideline for Electron Mobility Enhancement in Uniaxially-Strained (100)/< 100 > and (110)/< 110 > Fin Field Effect Transistors

Title
A Guideline for Electron Mobility Enhancement in Uniaxially-Strained (100)/< 100 > and (110)/< 110 > Fin Field Effect Transistors
Authors
Choi, S.Sun, W.Shin, H.
Ewha Authors
신형순
SCOPUS Author ID
신형순scopus
Issue Date
2017
Journal Title
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
ISSN
1533-4880JCR Link1533-4899JCR Link
Citation
vol. 17, no. 5, pp. 2999 - 3004
Keywords
Mobility EnhancementUniaxial StressFinFET
Publisher
AMER SCIENTIFIC PUBLISHERS
Indexed
SCI; SCIE; SCOPUS WOS
Abstract
In this study, we analyze the stress effect in uniaxially strained (100)- and (110)-oriented fin field effect transistors (FinFETs) and determine which stress condition can effectively enhance electron mobility. Electron mobility is accurately calculated using a self-consistent Schrodinger-Poisson solver; thus, our simulation results show excellent agreement with the experimental data. The stress-induced mobility as a function of inversion density (N-inv) is calculated in the (100) and (110) orientations. The results show that the stress-induced mobility exhibits considerably different behavior for various stress conditions. In the (110) case, longitudinal tensile and transverse compressive stresses are very effective in increasing the mobility, and stress over 0.5 GPa can cause the (110) mobility to be larger than the (100) mobility. An in-depth analysis reveals that this phenomenon results from differences in the occupancy, momentum relaxation time (tau), and conductivity mass changes as a consequence of different orientations and stress conditions.
DOI
10.1166/jnn.2017.14033
Appears in Collections:
엘텍공과대학 > 전자공학과 > Journal papers
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