Full metadata record
DC Field | Value | Language |
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dc.contributor.author | 김봉수 | - |
dc.date.accessioned | 2017-07-04T01:07:48Z | - |
dc.date.available | 2017-07-04T01:07:48Z | - |
dc.date.issued | 2017 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.other | OAK-20799 | - |
dc.identifier.uri | https://dspace.ewha.ac.kr/handle/2015.oak/235433 | - |
dc.description.abstract | In this Article, low-bandgap pTTDPP-BT polymers based on electron-accepting pyrrolo[3,4-c]pyrrole-1,4(2H,5H)-dione (DPP) and benzothiadiazole (BT) and electron-donating thienothiophene (TT) moieties were synthesized. Phototransistors have been fabricated using ambipolar-behaving pTTDPP-BT polymers as active channel materials. The electrical and photoresponsive properties of the pTTDPP-BT phototransistors were strongly dependent on the film annealing temperature. As-spun pTTDPP-BT phototransistors exhibited a low hole mobility of 0.007 cm2/(V·s) and a low electron mobility of 0.005 cm2/(V·s), which resulted in low photocurrent detection due to the limited transport of the charge carriers. Thermal treatment of the polymer thin films led to a significant enhancement in the carrier mobilities (hole and electron mobilities of 0.066 and 0.115 cm2/(V·s), respectively, for 200 °C annealing) and thus significantly improved photoresponsive properties. The 200 °C-annealed phototransistors showed a wide-range wavelength (405-850 nm) of photoresponse, and a high photocurrent/dark-current ratio of 150 with a fast photoswitching speed of less than 100 ms. This work demonstrates that a dual acceptor-containing low band gap polymer can be an important class of material in broadband photoresponsive transistors, and the crystallinity of the semiconducting polymer layer has a significant effect on the photoresponse characteristics. © 2017 American Chemical Society. | - |
dc.language | English | - |
dc.publisher | American Chemical Society | - |
dc.subject | carrier mobility | - |
dc.subject | low-bandgap polymer | - |
dc.subject | photoresponse | - |
dc.subject | photoswitching | - |
dc.subject | phototransistor | - |
dc.title | Photoresponsive Transistors Based on a Dual Acceptor-Containing Low-Bandgap Polymer | - |
dc.type | Article | - |
dc.relation.issue | 22 | - |
dc.relation.volume | 9 | - |
dc.relation.index | SCIE | - |
dc.relation.index | SCOPUS | - |
dc.relation.startpage | 19011 | - |
dc.relation.lastpage | 19020 | - |
dc.relation.journaltitle | ACS Applied Materials and Interfaces | - |
dc.identifier.doi | 10.1021/acsami.7b03058 | - |
dc.identifier.wosid | WOS:000403136400069 | - |
dc.identifier.scopusid | 2-s2.0-85020283943 | - |
dc.author.google | Kim M.J. | - |
dc.author.google | Choi S. | - |
dc.author.google | Lee M. | - |
dc.author.google | Heo H. | - |
dc.author.google | Lee Y. | - |
dc.author.google | Cho J.H. | - |
dc.author.google | Kim B. | - |
dc.contributor.scopusid | 김봉수(55588476300) | - |
dc.date.modifydate | 20210915142320 | - |