View : 116 Download: 0
A New Method for Determining the Subgap Density of States in n-/p-Type Low-Temperature Polycrystalline-Silicon Thin-Film Transistors
- A New Method for Determining the Subgap Density of States in n-/p-Type Low-Temperature Polycrystalline-Silicon Thin-Film Transistors
- Lee, Injae; Kim, Miryeon; Shin, Min-Ho; Shin, Hyungsoon
- Ewha Authors
- SCOPUS Author ID
- Issue Date
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- 1533-4880; 1533-4899
- vol. 17, no. 5, pp. 2951 - 2958
- Density of States; Low-Temperature Polycrystalline-Silicon Thin-Film Transistors
- AMER SCIENTIFIC PUBLISHERS
- SCI; SCIE; SCOPUS
- A new method for determining the acceptor-/donor-like density of states (DOS) over the entire bandgap using both the measured multi-frequency capacitance-voltage characteristics and the differential ideality factor in n-/p-type low-temperature polycrystalline-silicon thin-film transistors (LTPS TFTs) is proposed and verified. The density of deep states as a function of the gate voltage (V-gs) is obtained using the differential ideality factor, which is calculated from the transfer curves. The density of tail states as a function of V-gs is obtained using the subgap DOS-induced capacitance (C-LOC), which is calculated from the multi-frequency capacitance-voltage and resistance-voltage characteristics. The relationship between V-gs and energy, which is used to convert the DOS as a function of V-gs into the distribution of the DOS as a function of energy for device simulation, is defined using the frequency-independent gate capacitance (C-G), composed of the gate oxide capacitance (C-OX), C-LOC and the free-carrier charge induced capacitance (C-FREE). The device simulation results using the acceptor-/donor-like DOS obtained by the new method for n-/p-type LTPS TFTs exhibit excellent agreement with the measured data.
- Appears in Collections:
- 엘텍공과대학 > 전자공학과 > Journal papers
- Files in This Item:
There are no files associated with this item.
- RIS (EndNote)
- XLS (Excel)
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.