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Photogenerated plasmons in GaAs1-xBix

Title
Photogenerated plasmons in GaAs1-xBix
Authors
Yoon S.Seong M.J.Fluegel B.Mascarenhas A.Tixier S.Tiedje T.
Ewha Authors
윤석현
SCOPUS Author ID
윤석현scopus
Issue Date
2007
Journal Title
Applied Physics Letters
ISSN
0003-6951JCR Link
Citation
vol. 91, no. 8
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
Light scattering measurements in the dilute isoelectronically doped alloy Ga As1-x Bix reveal a large free electron population photogenerated by continuous-wave laser excitation at low temperature. Low-temperature time-resolved photoluminescence of the bismuth related near-band-gap states show carrier lifetimes of several nanoseconds. The authors attribute this to trapping of photoexcited holes at bismuth pair or cluster states located near the valence band maximum. © 2007 American Institute of Physics.
DOI
10.1063/1.2770760
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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