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A study on the magnetic properties of hydrogen-implanted Zn0.96Mn0.04O films

Title
A study on the magnetic properties of hydrogen-implanted Zn0.96Mn0.04O films
Authors
Park S.Y.Shin S.W.Kim P.J.Kang J.-H.Kim T.H.Lee Y.P.
Ewha Authors
김태희
SCOPUS Author ID
김태희scopus
Issue Date
2007
Journal Title
Journal of Magnetism and Magnetic Materials
ISSN
0304-8853JCR Link
Citation
vol. 310, no. 2 SUPPL. PART 3, pp. e708 - e710
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
Mn-doped ZnO films (for Mn at% ∼4%) were implanted using 30 keV H+ ions with a dose of 6.9×1016 cm-2 and subsequently annealed at 300 °C to study the effect of magnetism on the interstitial hydrogen in n-type II-VI magnetic semiconductors by using secondary ion mass spectroscopy (SIMS), Hall measurement and SQUID. We observed that the interstitial hydrogen leads to the changes in the magnetic hysteresis loop as well as the enhancement of carrier concentrations in the Mn-doped ZnO film. © 2006 Elsevier B.V. All rights reserved.
DOI
10.1016/j.jmmm.2006.10.1022
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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