Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 한승우 | - |
dc.date.accessioned | 2017-02-15T08:02:25Z | - |
dc.date.available | 2017-02-15T08:02:25Z | - |
dc.date.issued | 2007 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | OAK-4081 | - |
dc.identifier.uri | https://dspace.ewha.ac.kr/handle/2015.oak/234371 | - |
dc.description.abstract | Based on the first-principles calculations, the authors study defect-defect interactions between cation vacancies in rutile TiO2 and monoclinic HfO2. It is found that vacancies are greatly stabilized at small separations because of a large reconstruction of nearby oxygen atoms that have two broken bonds. As a result, O-O bonds resembling O2 or O 3 molecules are formed near the divacancy site. The defect levels originated from antibonding states of O p orbitals are identified within the energy gap, which can affect leakage currents and the density of trapped charges of oxides substantially. © 2007 American Institute of Physics. | - |
dc.language | English | - |
dc.title | Pairing of cation vacancies and gap-state creation in TiO2 and HfO2 | - |
dc.type | Article | - |
dc.relation.issue | 25 | - |
dc.relation.volume | 90 | - |
dc.relation.index | SCI | - |
dc.relation.index | SCIE | - |
dc.relation.index | SCOPUS | - |
dc.relation.journaltitle | Applied Physics Letters | - |
dc.identifier.doi | 10.1063/1.2749858 | - |
dc.identifier.wosid | WOS:000247468900071 | - |
dc.identifier.scopusid | 2-s2.0-34547413977 | - |
dc.author.google | Ahn H.-S. | - |
dc.author.google | Han S. | - |
dc.author.google | Hwang C.S. | - |
dc.contributor.scopusid | 한승우(55557541900) | - |
dc.date.modifydate | 20211210152321 | - |