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Ordered arrays of 〈100〉-oriented silicon nanorods by CMOS-compatible block copolymer lithography

Title
Ordered arrays of 〈100〉-oriented silicon nanorods by CMOS-compatible block copolymer lithography
Authors
Zschech D.Kim D.H.Milenin A.P.Scholz R.Hillebrand R.Hawker C.J.Russell T.P.Steinhart M.Gosele U.
Ewha Authors
김동하
SCOPUS Author ID
김동하scopus
Issue Date
2007
Journal Title
Nano Letters
ISSN
1530-6984JCR Link
Citation
vol. 7, no. 6, pp. 1516 - 1520
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
Dense, ordered arrays of 〈100〉-oriented Si nanorods with uniform aspect ratios up to 5:1 and a uniform diameter of 15 nm were fabricated by block copolymer lithography based on the inverse of the traditional cylindrical hole strategy and reactive ion etching. The reported approach combines control over diameter, orientation, and position of the nanorods and compatibility with complementary metal oxide semiconductor (CMOS) technology because no nonvolatile metals generating deep levels in silicon, such as gold or iron, are involved. The Si nanorod arrays exhibit the same degree of order as the block copolymer templates. © 2007 American Chemical Society.
DOI
10.1021/nl070275d
Appears in Collections:
자연과학대학 > 화학·나노과학전공 > Journal papers
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