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Al-doped TiO2 films with ultralow leakage currents for next generation DRAM capacitors

Title
Al-doped TiO2 films with ultralow leakage currents for next generation DRAM capacitors
Authors
Kim S.K.Choi G.-J.Lee S.Y.Seo M.Lee S.W.Han J.H.Ahn H.-S.Han S.Hwang C.S.
Ewha Authors
한승우
Issue Date
2008
Journal Title
Advanced Materials
ISSN
0935-9648JCR Link
Citation
vol. 20, no. 8, pp. 1429 - 1435
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
A number of researchers conducted studies to demonstrate aluminum ((Al)-doped titanium dioxide (TiO2) (ATO) dielectric thin films grown by atomic layer-deposition (ALD) method. The aluminum ((Al)-doped titanium dioxide (TiO2) (ATO) dielectric thin films grown by atomic layer-deposition (ALD) method, to be applied in next-generation dynamic random access memory (DRAM) capacitors. The researchers achieved specifications on the leakage currents of these DRAM capacitors through doping of TiO2 films with Al atoms. It was found that the specific thin film material and process can meet all the requirements of the study. The study also demonstrated that the specific thin film material is expected to provide the DRAM industry with a new way to solve one of the most significant problems in pursuing higher density DRAMs.
DOI
10.1002/adma.200701085
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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