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Electrical manipulation of nanofilaments in transition-metal oxides for resistance-based memory
- Electrical manipulation of nanofilaments in transition-metal oxides for resistance-based memory
- Lee M.-J.; Han S.; Jeon S.H.; Park B.H.; Kang B.S.; Ahn S.-E.; Kim K.H.; Lee C.B.; Kim C.J.; Yoo I.-K.; Seo D.H.; Li X.-S.; Park J.-B.; Lee J.-H.; Park Y.
- Ewha Authors
- Issue Date
- Journal Title
- Nano Letters
- vol. 9, no. 4, pp. 1476 - 1481
- SCI; SCIE; SCOPUS
- The fabrication of controlled nanostructures such as quantum dots, nanotubes, nanowires, and nanopillars has progressed rapidly over the past 10 years. However, both bottom-up and top-down methods to integrate the nanostructures are met with several challenges. For practical applications with the high level of the integration, an approach that can fabricate the required structures locally is desirable. In addition, the electrical signal to construct and control the nanostructures can provide significant advantages toward the stability and ordering. Through experiments on the negative resistance switching phenomenon in Pt - NiO - Pt structures, we have fabricated nanofilament channels that can be electrically connected or disconnected. Various analyses indicate that the nanofilaments are made of nickel and are formed at the grain boundaries. The scaling behaviors of the nickel nanofilaments were closely examined, with respect to the switching time, power, and resistance. In particular, the 100 nm × 100 nm cell was switchable on the nanosecond scale, making them ideal for the basis for high-speed, high-density, nonvolatile memory applications. © 2009 American Chemical Society.
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