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Influence of Gas Adsorption and Gold Nanoparticles on the Electrical Properties of CVD-Grown MoS2 Thin Films
- Influence of Gas Adsorption and Gold Nanoparticles on the Electrical Properties of CVD-Grown MoS2 Thin Films
- Cho, Yunae; Sohn, Ahrum; Kim, Sujung; Hahm, Myung Gwan; Kim, Dong-Ho; Cho, Byungjin; Kim, Dong-Wook
- Ewha Authors
- SCOPUS Author ID
- Issue Date
- Journal Title
- ACS APPLIED MATERIALS & INTERFACES
- ACS APPLIED MATERIALS & INTERFACES vol. 8, no. 33, pp. 21612 - 21617
- MoS2; gas adsorption; charge transfer; chemical vapor deposition; work function
- AMER CHEMICAL SOC
- SCI; SCIE; SCOPUS
- Document Type
- Molybdenum disulfide (MoS2) has increasingly attracted attention from researchers and is now one of the most intensively explored atomic-layered two-dimensional semiconductors. Control of the carrier concentration and doping type of MoS2 is crucial for its application in electronic and optoelectronic devices. Because the MoS2 layers are atomically thin, their transport characteristics may be very sensitive to ambient gas adsorption and the resulting charge transfer. We investigated the influence of the ambient gas (N-2, H-2/N-2, and O-2) choice on the resistance (R) and surface work function (WF) of trilayer MoS2 thin films grown via chemical vapor deposition. We also studied the electrical properties of gold (Au)-nanoparticle (NP)-coated MoS, thin films; their R value was found to be 2 orders of magnitude smaller than that for bare samples. While the WF largely varied for each gas, R was almost invariant for both the bare and Au-NP-coated samples regardless of which gas was used. Temperature-dependent transport suggests that variable range hopping is the dominant mechanism for electrical conduction for bare and Au-NP-coated MoS2 thin films. The charges transferred from the gas adsorbates might be insufficient to induce measurable R change and/or be trapped in the defect states. The smaller WF and larger localization length of the Au-NP-coated sample, compared with the bare sample, suggest that more carriers and less defects enhanced conduction in MoS2.
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