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Side-illuminated tip-enhanced Raman study of edge phonon in graphene at the electrical breakdown limit

Title
Side-illuminated tip-enhanced Raman study of edge phonon in graphene at the electrical breakdown limit
Authors
Okuno Y.Vantasin S.Yang I.-S.Son J.Hong J.Tanaka Y.Y.Nakata Y.Ozaki Y.Naka N.
Ewha Authors
양인상
SCOPUS Author ID
양인상scopus
Issue Date
2016
Journal Title
Applied Physics Letters
ISSN
0003-6951JCR Link
Citation
vol. 108, no. 16
Publisher
American Institute of Physics Inc.
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
Nanoscale integration of graphene into a circuit requires a stable performance under high current density. However, the effects of the current density that approach the electronic breakdown limit of graphene are not well understood. We explored the effects of a high current density, close to the electronic breakdown limit of 10 A/cm (∼3.0 × 108Acm2), on graphene, using tip-enhanced Raman scattering. The results showed that the high current density induces Raman bands at 1456 and 1530 cm-1, which were assigned to edge-phonon modes originating from zigzag and armchair edges. This led us to conclude that C-C bonds are cleaved due to the high current density, leaving edge structures behind, which were detected through the observation of localized phonons. © 2016 Author(s).
DOI
10.1063/1.4947559
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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