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dc.contributor.author신형순*
dc.date.accessioned2016-08-29T12:08:42Z-
dc.date.available2016-08-29T12:08:42Z-
dc.date.issued2016*
dc.identifier.issn0021-4922*
dc.identifier.otherOAK-18470*
dc.identifier.urihttps://dspace.ewha.ac.kr/handle/2015.oak/231487-
dc.description.abstractThe 1/2 and 1/3 bias schemes are commonly used to select a cell in a resistive random access memory (ReRAM) crossbar array. The 1/3 bias scheme is advantageous in terms of its write margin but typically requires a higher power consumption than the 1/2 bias scheme. The power consumption of ReRAM can vary according to the nonlinearity of the selector device. In this paper, we propose a power guideline model that suggests selector nonlinearity requirements to guarantee a lower power consumption for the 1/3 bias scheme than for the 1/2 bias scheme. Therefore, the selector nonlinearity requirements for the low power consumption of the 1/3 bias scheme can be immediately obtained using this guideline model without simulation. © 2016 The Japan Society of Applied Physics.*
dc.languageEnglish*
dc.publisherJapan Society of Applied Physics*
dc.titleGuideline model for the bias-scheme-dependent power consumption of a resistive random access memory crossbar array*
dc.typeArticle*
dc.relation.issue4*
dc.relation.volume55*
dc.relation.indexSCI*
dc.relation.indexSCIE*
dc.relation.indexSCOPUS*
dc.relation.journaltitleJapanese Journal of Applied Physics*
dc.identifier.doi10.7567/JJAP.55.04EE10*
dc.identifier.wosidWOS:000373929400065*
dc.identifier.scopusid2-s2.0-84963686221*
dc.author.googleSun W.*
dc.author.googleChoi S.*
dc.author.googleLim H.*
dc.author.googleShin H.*
dc.contributor.scopusid신형순(7404012125)*
dc.date.modifydate20240322125227*
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공과대학 > 전자전기공학전공 > Journal papers
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