Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 신형순 | * |
dc.date.accessioned | 2016-08-29T12:08:42Z | - |
dc.date.available | 2016-08-29T12:08:42Z | - |
dc.date.issued | 2016 | * |
dc.identifier.issn | 0021-4922 | * |
dc.identifier.other | OAK-18470 | * |
dc.identifier.uri | https://dspace.ewha.ac.kr/handle/2015.oak/231487 | - |
dc.description.abstract | The 1/2 and 1/3 bias schemes are commonly used to select a cell in a resistive random access memory (ReRAM) crossbar array. The 1/3 bias scheme is advantageous in terms of its write margin but typically requires a higher power consumption than the 1/2 bias scheme. The power consumption of ReRAM can vary according to the nonlinearity of the selector device. In this paper, we propose a power guideline model that suggests selector nonlinearity requirements to guarantee a lower power consumption for the 1/3 bias scheme than for the 1/2 bias scheme. Therefore, the selector nonlinearity requirements for the low power consumption of the 1/3 bias scheme can be immediately obtained using this guideline model without simulation. © 2016 The Japan Society of Applied Physics. | * |
dc.language | English | * |
dc.publisher | Japan Society of Applied Physics | * |
dc.title | Guideline model for the bias-scheme-dependent power consumption of a resistive random access memory crossbar array | * |
dc.type | Article | * |
dc.relation.issue | 4 | * |
dc.relation.volume | 55 | * |
dc.relation.index | SCI | * |
dc.relation.index | SCIE | * |
dc.relation.index | SCOPUS | * |
dc.relation.journaltitle | Japanese Journal of Applied Physics | * |
dc.identifier.doi | 10.7567/JJAP.55.04EE10 | * |
dc.identifier.wosid | WOS:000373929400065 | * |
dc.identifier.scopusid | 2-s2.0-84963686221 | * |
dc.author.google | Sun W. | * |
dc.author.google | Choi S. | * |
dc.author.google | Lim H. | * |
dc.author.google | Shin H. | * |
dc.contributor.scopusid | 신형순(7404012125) | * |
dc.date.modifydate | 20240322125227 | * |