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Influence of the ZnS precursor thickness on high efficiency Cu2ZnSn(S,Se)4 thin-film solar cells grown by stacked-sputtering and selenization process

Title
Influence of the ZnS precursor thickness on high efficiency Cu2ZnSn(S,Se)4 thin-film solar cells grown by stacked-sputtering and selenization process
Authors
Kim G.Y.Son D.-H.Nguyen T.T.T.Yoon S.Kwon M.Jeon C.-W.Kim D.-H.Kang J.-K.Jo W.
Ewha Authors
조윌렴윤석현
SCOPUS Author ID
조윌렴scopus; 윤석현scopus
Issue Date
2015
Journal Title
2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
Keywords
and photo-conversion efficiencyCu2ZnSn(S,Se)4Depth profileKelvin probe force microscopyRaman spectroscopySecondary phase
Publisher
Institute of Electrical and Electronics Engineers Inc.
Indexed
SCOPUS scopus
Abstract
CZTSSe thin-films were deposited by stacked sputtering methods (ZnS/SnS/Cu) and annealed with selenization. We adjusted the thickness of the ZnS precursor layer in CZT precursors. A 337 nm thickness of ZnS precursor was shown an efficiency of up to 9.1%. We investigated the secondary phases by Raman spectroscopy and Kelvin probe force microscopy with depth profiles. The Cu2SnSe3, ZnSe, and MoSe2 secondary phases appeared near the back contact region. The phase distributions of the CZTSSe thin-films are different depending on ZnS precursor thickness with different depths. This phase characterization can describe the influences to the device performance of the CZTSSe thin-film solar cells. © 2015 IEEE.
DOI
10.1109/PVSC.2015.7356411
ISBN
9781479979448
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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