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Forward current transport mechanism of Cu Schottky barrier formed on n-type Ge Wafer

Title
Forward current transport mechanism of Cu Schottky barrier formed on n-type Ge Wafer
Authors
Kim S.H.Jung C.Y.Kim H.Cho Y.Kim D.-W.
Ewha Authors
김동욱
SCOPUS Author ID
김동욱scopus
Issue Date
2015
Journal Title
Transactions on Electrical and Electronic Materials
ISSN
1229-7607JCR Link
Citation
vol. 16, no. 3, pp. 151 - 155
Keywords
Barrier heightIdeality factorRichardson constant
Publisher
Korean Institute of Electrical and Electronic Material Engineers
Indexed
SCOPUS; KCI scopus
Abstract
We fabricated the Cu Schottky contact on an n-type Ge wafer and investigated the forward bias current-voltage (I-V) characteristics in the temperature range of 100~300 K. The zero bias barrier height and ideality factor were determined based on the thermionic emission (TE) model. The barrier height increased and the ideality factor decreased with increasing temperature. Such temperature dependence of the barrier height and the ideality factor was associated with spatially inhomogeneous Schottky barriers. A notable deviation from the theoretical Richardson constant (140.0 Acm-2K-2 for n-Ge) on the conventional Richardson plot was alleviated by using the modified Richardson plot, which yielded the Richardson constant of 392.5 Acm-2K-2. Finally, we applied the theory of space-charge-limitedcurrent (SCLC) transport to the high forward bias region to find the density of localized defect states (N<inf>t</inf>), which was determined to be 1.46 × 1012 eV-1cm-3. © 2015 KIEEME. All rights reserved.
DOI
10.4313/TEEM.2015.16.3.151
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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