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dc.contributor.author우정원-
dc.contributor.author강보영-
dc.date.accessioned2017-08-29T03:06:09Z-
dc.date.available2017-08-29T03:06:09Z-
dc.date.issued2012-
dc.identifier.isbn9781467309776-
dc.identifier.urihttp://dspace.ewha.ac.kr/handle/2015.oak/229788-
dc.description.abstractDoping level of dopant carrier density of substrates is varied to control the meta-resonances in terahertz metamaterials. Resonance peak position and quality factor exhibit a red shift and broadening when doping level is lowered. © 2012 IEEE.-
dc.description.sponsorshipOptical Society of Korea (OSK);Institute of Electronics Engineers of Korea (IEEK);Korea Information and Communications Society (KICS);Korea Institute of Electrical Engineers (KIEE)-
dc.languageEnglish-
dc.titleControl of meta-resonance in metamaterial by dopant carrier density of silicon substrate-
dc.typeConference Paper-
dc.relation.indexSCOPUS-
dc.relation.startpage689-
dc.relation.lastpage690-
dc.relation.journaltitleTechnical Digest - 2012 17th Opto-Electronics and Communications Conference, OECC 2012-
dc.identifier.doi10.1109/OECC.2012.6276793-
dc.identifier.scopusid2-s2.0-84867600198-
dc.author.googleLee Y.U.-
dc.author.googleWoo J.H.-
dc.author.googleChoi E.-
dc.author.googleKim E.S.-
dc.author.googleKang B.-
dc.author.googleKim J.-
dc.author.googlePark B.C.-
dc.author.googleKim J.H.-
dc.author.googleWu J.W.-
dc.contributor.scopusid우정원(7409252681)-
dc.date.modifydate20180104081001-
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자연과학대학 > 물리학전공 > Journal papers
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