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Control of meta-resonance in metamaterial by dopant carrier density of silicon substrate

Title
Control of meta-resonance in metamaterial by dopant carrier density of silicon substrate
Authors
Lee Y.U.Woo J.H.Choi E.Kim E.S.Kang B.Kim J.Park B.C.Kim J.H.Wu J.W.
Ewha Authors
우정원강보영
SCOPUS Author ID
우정원scopus; 강보영scopus
Issue Date
2012
Journal Title
Technical Digest - 2012 17th Opto-Electronics and Communications Conference, OECC 2012
Citation
Technical Digest - 2012 17th Opto-Electronics and Communications Conference, OECC 2012, pp. 689 - 690
Indexed
SCOPUS scopus
Document Type
Conference Paper
Abstract
Doping level of dopant carrier density of substrates is varied to control the meta-resonances in terahertz metamaterials. Resonance peak position and quality factor exhibit a red shift and broadening when doping level is lowered. © 2012 IEEE.
DOI
10.1109/OECC.2012.6276793
ISBN
9781467309776
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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