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Control of meta-resonance in metamaterial by dopant carrier density of silicon substrate

Title
Control of meta-resonance in metamaterial by dopant carrier density of silicon substrate
Authors
Lee Y.U.Woo J.H.Choi E.Kim E.S.Kang B.Kim J.Park B.C.Kim J.H.Wu J.W.
Ewha Authors
우정원강보영
SCOPUS Author ID
우정원scopus
Issue Date
2012
Journal Title
Technical Digest - 2012 17th Opto-Electronics and Communications Conference, OECC 2012
Indexed
SCOPUS scopus
Abstract
Doping level of dopant carrier density of substrates is varied to control the meta-resonances in terahertz metamaterials. Resonance peak position and quality factor exhibit a red shift and broadening when doping level is lowered. © 2012 IEEE.
DOI
10.1109/OECC.2012.6276793
ISBN
9781467309776
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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