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Kelvin probe microscopic studies on grain boundaries of Cu(In, Ga)Se 2 and Cu 2ZnSnSe 4 thin-films grown by co-evaporation methods

Title
Kelvin probe microscopic studies on grain boundaries of Cu(In, Ga)Se 2 and Cu 2ZnSnSe 4 thin-films grown by co-evaporation methods
Authors
Jeong A.R.Shin R.H.Jo W.Gwak J.Ahn S.Yun J.H.Yoon K.
Ewha Authors
조윌렴
SCOPUS Author ID
조윌렴scopus
Issue Date
2011
Journal Title
Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN
0160-8371JCR Link
Citation
pp. 387 - 389
Indexed
SCOPUS scopus
Abstract
Cu 2ZnSnSe 4 (CZTSe) thin-films is a promising candidate for absorber layer as an alternative to Cu(In, Ga)Se 2 (CIGS) solar cells. However, they have been recorded lower efficiency than that of CIGS until now. In CIGS, local electrical property is an important issue for high efficiency such as Na interstitial in the grain boundaries (GBs). Therefore, difference between CIGS with CZTSe in local electrical property can be one of the clues for explaining lower efficiency of CZTSe thin-film solar cells than CIGS. We studied local surface potential using Kelvin probe force microscopy (KPFM) around GBs. The results reveal difference of electron-hole transport behavior on both thin-films at GBs. Eventually, we can understand relation between solar cell efficiency and local electrical property. © 2011 IEEE.
DOI
10.1109/PVSC.2011.6185975
ISBN
9781424499656
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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