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A low-power wideband transimpedance amplifier in 0.13μm CMOS

Title
A low-power wideband transimpedance amplifier in 0.13μm CMOS
Authors
Tak J.Kim H.Shin J.Lee J.Han J.Park S.M.
Ewha Authors
박성민
SCOPUS Author ID
박성민scopus
Issue Date
2011
Journal Title
2011 IEEE MTT-S International Microwave Workshop Series on Intelligent Radio for Future Personal Terminals, IMWS-IRFPT 2011
Indexed
SCOPUS scopus
Abstract
This paper presents a low-power wideband transimpedance amplifier (TIA) for the applications of multi-band wireless communication systems. Realized in a standard 0.13μm CMOS technology, the measured results of the TIA demonstrate the maximum gain of 16dB in the frequency range of 800MHz∼4.3GHz, the noise figure of < 5.88dB, the input-referred third order intercept point (IIP3) of -5.4dBm at 2.4GHz, and the power consumption of 12mW from a single 1.2V supply. The chip occupies the total area of 0.7×1.1mm2. © 2011 IEEE.
DOI
10.1109/IMWS2.2011.6027202
ISBN
9781457709630
Appears in Collections:
엘텍공과대학 > 전자공학과 > Journal papers
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