Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김동욱 | * |
dc.date.accessioned | 2016-08-28T11:08:24Z | - |
dc.date.available | 2016-08-28T11:08:24Z | - |
dc.date.issued | 2010 | * |
dc.identifier.isbn | 9781424474196 | * |
dc.identifier.issn | 0163-1918 | * |
dc.identifier.other | OAK-13547 | * |
dc.identifier.uri | https://dspace.ewha.ac.kr/handle/2015.oak/229525 | - |
dc.description.abstract | Radial heterojunction nanowires (NWs) using a ZnO(shell)/Si(core) coaxial structure are for the first time reported for a novel photodiode application. Strong antireflective characteristics are shown by employing vertically aligned Si NW arrays. A thin ZnO shell deposited onto a Si NW formed a radial junction which enabled effective separation of charge carriers. Furthermore, a ZnO nanostructure demonstrates a very high internal gain in photoconductivity due to the surface-enhanced electron-hole separation. The photodetection range, either ultraviolet (UV) or visible, can be determined by applying forward or reverse bias, respectively. Compared to a planar heterojunction photodiode, a photoresponsivity of the radial heterojunction structure shows similar values despite only ∼20% consumption of a ZnO thickness required for a planar junction. In addition, ∼2.5 times increase in UV responsivity is also presented using the radial heterojunction structure under the ZnO thickness same as a planar counterpart. Our coaxial ZnO/Si NW photodetectors suggest bright prospect for enhancing a photoresponsivity while less consuming ZnO via controlling the wired nanostructure. ©2010 IEEE. | * |
dc.description.sponsorship | IEEE Electron Devices Society | * |
dc.language | English | * |
dc.title | Cost-efficient fabrication of UV/Vis nanowire (NW) photodiodes enabled by ZnO/Si radial heterojunction | * |
dc.type | Conference Paper | * |
dc.relation.index | SCOPUS | * |
dc.relation.startpage | 9.5.1 | * |
dc.relation.lastpage | 9.5.4 | * |
dc.relation.journaltitle | Technical Digest - International Electron Devices Meeting, IEDM | * |
dc.identifier.doi | 10.1109/IEDM.2010.5703330 | * |
dc.identifier.scopusid | 2-s2.0-79951843159 | * |
dc.author.google | Um H.-D. | * |
dc.author.google | Park K.-T. | * |
dc.author.google | Jung J.-Y. | * |
dc.author.google | Jee S.-W. | * |
dc.author.google | Moiz S.A. | * |
dc.author.google | Ahn C.H. | * |
dc.author.google | Cho H.K. | * |
dc.author.google | Lee E. | * |
dc.author.google | Kim D.-W. | * |
dc.author.google | Park Y.C. | * |
dc.author.google | Yang J.M. | * |
dc.author.google | Lim S.K. | * |
dc.author.google | Lee J.-H. | * |
dc.contributor.scopusid | 김동욱(57203350633) | * |
dc.date.modifydate | 20240123114549 | * |