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Resonant Raman scattering studies of localized impurity states in semiconductors

Title
Resonant Raman scattering studies of localized impurity states in semiconductors
Authors
Yoon S.
Ewha Authors
윤석현
SCOPUS Author ID
윤석현scopus
Issue Date
2009
Journal Title
Journal of the Korean Physical Society
ISSN
0374-4884JCR Link
Citation
vol. 55, no. 2, pp. 646 - 651
Indexed
SCI; SCIE; SCOPUS; KCI WOS scopus
Abstract
We review resonant Raman scattering studies of GaAs1-xN x, where nitrogen impurities are spatially localized in the host GaAs. The conventional intensity resonance could provide symmetry information regarding nitrogen-induced states, such as E+, which turned out to have significant components of an L and an X character, in addition to a Y character. We also observed the rather unusual and distinctive phonon linewidth resonance due to spatially locaUzed intermediate states that originated from a splitting of the L-point conduction band. We show that the resonant Raman scattering response, including asymmetric linewidth broadening resonances, can provide a powerful means to study semiconductor systems with strongly localized impurity states.
DOI
10.3938/jkps.55.646
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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