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Electronic structure of the NiOx film fabricated by using a thermal oxidation technique

Title
Electronic structure of the NiOx film fabricated by using a thermal oxidation technique
Authors
Seo Y.K.Lee D.J.Lee Y.S.Choi W.S.Kim D.-W.
Ewha Authors
김동욱
SCOPUS Author ID
김동욱scopus
Issue Date
2009
Journal Title
Journal of the Korean Physical Society
ISSN
0374-4884JCR Link
Citation
vol. 55, no. 1, pp. 129 - 133
Indexed
SCI; SCIE; SCOPUS; KCI WOS scopus
Abstract
We investigated the electronic properties of thermally-oxidized Ni films, which have recently attracted much attention due to their good resistive switching behaviors. We found that the XRD patterns and the optical responses of the oxidized Ni films exhibited systematic changes with oxidation degree. The optical response of the NiO films appeared to be consistent with those characteristic of doped Mott insulators. We also discuss the possibility of phase coexistence.
DOI
10.3938/jkps.55.129
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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