Electronic structure of the NiOx film fabricated by using a thermal oxidation technique

Abstract

We investigated the electronic properties of thermally-oxidized Ni films, which have recently attracted much attention due to their good resistive switching behaviors. We found that the XRD patterns and the optical responses of the oxidized Ni films exhibited systematic changes with oxidation degree. The optical response of the NiO films appeared to be consistent with those characteristic of doped Mott insulators. We also discuss the possibility of phase coexistence.