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자연과학대학
물리학전공
Journal papers
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Optical properties of laser-processed InxGa1-xAs
Title
Optical properties of laser-processed InxGa1-xAs
Authors
Park J.-H.
;
Cho H.Y.
;
Tong C.
;
Min S.-K.
;
Han S.H.
;
Wu J.W.
;
Yang I.-S.
Ewha Authors
양인상
;
우정원
SCOPUS Author ID
양인상
; 우정원
Issue Date
1994
Journal Title
Applied Physics A Solids and Surfaces
ISSN
0721-7250
Citation
Applied Physics A Solids and Surfaces vol. 59, no. 6, pp. 617 - 621
Publisher
Springer-Verlag
Indexed
SCOPUS
Document Type
Article
Abstract
Various spots in GaAs, In-diffused with the 1.064 μm line of pulsed Nd:YAG laser with several energy densities, have been characterized and compared with samples prepared by the conventional rapid thermal annealing method. Of the energy densities used, the spot processed with an energy density of 7 J/cm2 shows InxGa1-xAs phases with an indium concentration of 60% and below. An abrupt boundary in the indium concentration is observed at the edge of the laser-annealed spot. The diffusion depth is found to be less than 1000 Å. The spot processed with an energy density of 14 J/cm2 shows considerable damage from the irradiation resulting in strain in the lattice. The samples prepared by the thermal annealing method show similar results to the laser-diffused samples. However, these thermally annealed samples suffer from arsenic loss unlike the laser-processed samples. It can be concluded that laser-induced alloying of indium into GaAs can be achieved with less arsenic loss than the thermal annealing method. © 1994 Springer-Verlag.
DOI
10.1007/BF00331922
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