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Optical properties of laser-processed InxGa1-xAs

Title
Optical properties of laser-processed InxGa1-xAs
Authors
Park J.-H.Cho H.Y.Tong C.Min S.-K.Han S.H.Wu J.W.Yang I.-S.
Ewha Authors
양인상우정원
SCOPUS Author ID
양인상scopus; 우정원scopus
Issue Date
1994
Journal Title
Applied Physics A Solids and Surfaces
ISSN
0721-7250JCR Link
Citation
vol. 59, no. 6, pp. 617 - 621
Publisher
Springer-Verlag
Indexed
SCOPUS scopus
Abstract
Various spots in GaAs, In-diffused with the 1.064 μm line of pulsed Nd:YAG laser with several energy densities, have been characterized and compared with samples prepared by the conventional rapid thermal annealing method. Of the energy densities used, the spot processed with an energy density of 7 J/cm2 shows InxGa1-xAs phases with an indium concentration of 60% and below. An abrupt boundary in the indium concentration is observed at the edge of the laser-annealed spot. The diffusion depth is found to be less than 1000 Å. The spot processed with an energy density of 14 J/cm2 shows considerable damage from the irradiation resulting in strain in the lattice. The samples prepared by the thermal annealing method show similar results to the laser-diffused samples. However, these thermally annealed samples suffer from arsenic loss unlike the laser-processed samples. It can be concluded that laser-induced alloying of indium into GaAs can be achieved with less arsenic loss than the thermal annealing method. © 1994 Springer-Verlag.
DOI
10.1007/BF00331922
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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