View : 18 Download: 0

Multi-level storage in a nano-floating gate MOS capacitor using a stepped control oxide

Title
Multi-level storage in a nano-floating gate MOS capacitor using a stepped control oxide
Authors
Seo J.-H.Kim J.-Y.Kim Y.-B.Kim D.-W.Kim H.Cho H.Choi D.-K.
Ewha Authors
김동욱
SCOPUS Author ID
김동욱scopus
Issue Date
2013
Journal Title
Microelectronics Reliability
ISSN
0026-2714JCR Link
Citation
vol. 53, no. 4, pp. 528 - 532
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
A non-volatile nanocrystal floating gate MOS capacitor with multi-level function is achieved by engineering the electric field within the tunneling oxide via a stepped control oxide. A MOS capacitor containing Au nanocrystals in a stepped HfO2 and SiO2 tunneling oxide matrix was fabricated in order to demonstrate this concept. The flatband voltage shift, measured from the C-V hysteresis curves, exhibited a saturated region within a programming mode that is not observed in the conventional step free MOS capacitor. The values of the flatband voltage shift measured at the first and second saturation were slightly higher than the values predicted from the Coulomb blockade theory. However, there is a strong consensus with the flatband voltage ratios between experimental results and the predicted values, which supports successful operation. More obvious evidence of multi-level storage function was confirmed by turnaround voltage measurement. © 2012 Elsevier Ltd. All rights reserved.
DOI
10.1016/j.microrel.2012.12.008
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE