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Analytic model of spin-torque oscillators (STO) for circuit-level simul

Title
Analytic model of spin-torque oscillators (STO) for circuit-level simul
Authors
Ahn S.Lim H.Shin H.Lee S.
Ewha Authors
신형순이승준
SCOPUS Author ID
신형순scopus; 이승준scopus
Issue Date
2013
Journal Title
Journal of Semiconductor Technology and Science
ISSN
1598-1657JCR Link
Citation
vol. 13, no. 1, pp. 28 - 33
Indexed
SCIE; SCOPUS; KCI WOS scopus
Abstract
Spin-torque oscillators (STO) is a new device that can be used as a tunable microwave source in various wireless devices. Spin-transfer torque effect in magnetic multilayered nanostructure can induce precession of magnetization when bias current and external magnetic field are properly applied, and a microwave signal is generated from that precession. We proposed a semi-empirical circuit-level model of an STO in previous work. In this paper, we present a refined STO model which gives more accuracy by considering physical phenomena in the calculation of effective field. Characteristics of the STO are expressed as functions of external magnetic field and bias current in Verilog-A HDL such that they can be simulated with circuit-level simulators such as Hspice. The simulation results are in good agreement with the experimental data.
DOI
10.5573/JSTS.2013.13.1.028
Appears in Collections:
엘텍공과대학 > 전자공학과 > Journal papers
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