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Role of alumina buffer layer on the dielectric and piezoelectric properties of PZT system thick films

Title
Role of alumina buffer layer on the dielectric and piezoelectric properties of PZT system thick films
Authors
Shin T.H.Ha J.-Y.Song H.C.Yoon S.-J.Hwang S.-J.Nahm S.Park H.-H.Choi J.-W.
Ewha Authors
황성주
SCOPUS Author ID
황성주scopus
Issue Date
2013
Journal Title
Journal of the American Ceramic Society
ISSN
0002-7820JCR Link
Citation
vol. 96, no. 2, pp. 491 - 495
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
Piezoelectric properties of screen-printed thick films, 0.01Pb(Mg 1/2W1/2)O3-0.41Pb(Ni1/3Nb 2/3)O3-0.35PbTiO3-0.23PbZrO3 + 0.1 wt% Y2O3 + 1.5 wt% ZnO (PMW-PNN-PT-PZ+YZ) on alumina (Al2O3) buffer layers deposited on Si substrates, were studied. To improve piezoelectric properties of and integrate the PMW-PNN-PT-PZ+YZ thick films, the Al2O3 buffer layers on silicon (Si) substrates were used. The Al2O3 buffer layer on the Si substrate suppressed the pyrochlore phases of the piezoelectric thick films and prevented interdiffusion of Si and Pb. The PMW-PNN-PT-PZ+YZ thick films with 900 nm thick Al2O3 buffer layer showed piezoelectric properties such as Pr = 32 μC/cm2, E c = 25 kV/cm, and d33 = 32 pC/N. These significant piezoelectric properties of our screen-printed PMW-PNN-PT-PZ+YZ thick films by the Al2O3 buffer layers can be applied to functional thick film in many micro-electromechanical system (MEMS) applications such as micro actuators and sensors. © 2012 The American Ceramic Society.
DOI
10.1111/jace.12052
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자연과학대학 > 화학·나노과학전공 > Journal papers
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