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Barrier inhomogeneity in Ag Schottky contacts to bulk ZnO grown by different methods

Title
Barrier inhomogeneity in Ag Schottky contacts to bulk ZnO grown by different methods
Authors
Kim H.Sohn A.Kim D.-W.
Ewha Authors
김동욱
SCOPUS Author ID
김동욱scopus
Issue Date
2012
Journal Title
Journal of the Korean Physical Society
ISSN
0374-4884JCR Link
Citation
vol. 60, no. 3, pp. 509 - 513
Indexed
SCI; SCIE; SCOPUS; KCI WOS scopus
Abstract
The electrical properties of Ag Schottky contacts to differently grown bulk ZnO single crystals were comparatively investigated. Schottky contacts to O-polar ZnO revealed higher barrier heights and lower ideality factors than those to Zn-polar ZnO. A higher degree of oxidation at the Ag-ZnO interface might occur for the O-polar ZnO, increasing the barrier heights. Compared to the current values measured under vacuum, those measured in an air ambient were decreased, suggesting that compensation of the surface conductive layer by acceptor-like adsorbates such as O 2 and H 2O plays an important role in the current transport of Ag/ZnO contacts. © 2012 The Korean Physical Society.
DOI
10.3938/jkps.60.509
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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