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Power law behavior of magnetoresistance in tris(8-hydroxyquinolinato) aluminum-based organic light-emitting diodes

Title
Power law behavior of magnetoresistance in tris(8-hydroxyquinolinato) aluminum-based organic light-emitting diodes
Authors
Kang H.Park C.H.Lim J.Lee C.Kang W.Yoon C.S.
Ewha Authors
강원
SCOPUS Author ID
강원scopus
Issue Date
2012
Journal Title
Organic Electronics: physics, materials, applications
ISSN
1566-1199JCR Link
Citation
vol. 13, no. 6, pp. 1012 - 1017
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
Long-term current drift and dielectric relaxation in organic thin films of a single-layer structure pose a serious problem for the accurate measurement of magnetoresistance at low magnetic fields. A new measurement scheme was devised to minimize errors and to report that the magnetoresistance in tris(8-hydroxyquinolinato)aluminum obeys a power law on the magnetic field at 300, 100, and 4.2 K in an entire range from 1 to 140 mT. The exponent of the power increases gradually from 0.47 for a bias voltage of 3 V to 0.58 for a bias voltage of 8 V. The magnetoresistance was observable above the threshold voltage only and its sign was always negative. © 2012 Elsevier B.V. All rights reserved.
DOI
10.1016/j.orgel.2012.02.025
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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