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Ferroelectricity-induced resistive switching in Pb(Zr 0.52Ti 0.48)O 3/Pr 0.7Ca 0.3MnO 3/Nb-doped SrTiO 3 epitaxial heterostructure

Title
Ferroelectricity-induced resistive switching in Pb(Zr 0.52Ti 0.48)O 3/Pr 0.7Ca 0.3MnO 3/Nb-doped SrTiO 3 epitaxial heterostructure
Authors
Md. Sadaf S.Mostafa Bourim E.Liu X.Hasan Choudhury S.Kim D.-W.Hwang H.
Ewha Authors
김동욱
SCOPUS Author ID
김동욱scopus
Issue Date
2012
Journal Title
Applied Physics Letters
ISSN
0003-6951JCR Link
Citation
vol. 100, no. 11
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
We investigated the effect of a ferroelectric Pb(Zr 0.52Ti 0.48)O 3 (PZT) thin film on the generation of resistive switching in a stacked Pr 0.7Ca 0.3MnO 3 (PCMO)/Nb-doped SrTiO 3 (Nb:STO) heterostructure forming a p-n junction. To promote the ferroelectric effect, the thin PZT active layer was deposited on an epitaxially grown p-type PCMO film on a lattice-matched n-type Nb:STO single crystal. It was concluded that the observed resistive switching behavior in the all-perovskite Pt/PZT/PCMO/Nb:STO heterostructure was related to the modulation of PCMO/Nb:STO p-n junction's depletion width, which was caused either by the PZT ferroelectric polarization field effect, the electrochemical drift of oxygen ions under an electric field, or both simultaneously. © 2012 American Institute of Physics.
DOI
10.1063/1.3694016
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자연과학대학 > 물리학전공 > Journal papers
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