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Microstructures and electrical properties of CaCu3Ti 4O12 thin films on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition
- Title
- Microstructures and electrical properties of CaCu3Ti 4O12 thin films on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition
- Authors
- Lee S.-Y.; Choi S.-M.; Kim M.-Y.; Yoo S.-I.; Hye Lee J.; Jo W.; Kim Y.-H.; Choi K.J.
- Ewha Authors
- 조윌렴
- SCOPUS Author ID
- 조윌렴
- Issue Date
- 2011
- Journal Title
- Journal of Materials Research
- ISSN
- 0884-2914
- Citation
- Journal of Materials Research vol. 26, no. 19, pp. 2543 - 2551
- Indexed
- SCI; SCIE; SCOPUS
- Document Type
- Article
- Abstract
- We investigated microstructures, compositional distributions, and electrical properties of dielectric CaCu3Ti4O12 (CCTO) thin films deposited on Pt/TiO2/SiO2/Si substrates from 700 to 800 °C by pulsed laser deposition. With increasing the deposition temperature from 700 to 750 °C, the dielectric constants (εr) of CCTO films were greatly enhanced from ∼300 to ∼2000 at 10 kHz, respectively. However, the εr values of CCTO films were gradually decreased above 750 °C, which was surely attributable to the formation of a TiO2-rich dead layer at the interface between CCTO and Pt electrode. Compositional analyses by Auger electron spectroscopy, energy dispersive spectroscopy, and electron energy loss spectroscopy revealed that the TiO2-rich dead layer became thicker because of severe Cu diffusion from CCTO films to Pt electrode. The leakage current behaviors of CCTO films are in good agreement with Poole-Frenkel conduction mechanism, where both the TiO2-rich dead layer and rutile TiO2 nanocrystalline particles are considered to play a role of charge trapping centers. Copyright © 2011 Materials Research Society.
- DOI
- 10.1557/jmr.2011.226
- Appears in Collections:
- 자연과학대학 > 물리학전공 > Journal papers
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