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Enhanced exciton separation through negative energy band bending at grain boundaries of Cu2ZnSnSe4 thin-films

Title
Enhanced exciton separation through negative energy band bending at grain boundaries of Cu2ZnSnSe4 thin-films
Authors
Jeong A.R.Jo W.Jung S.Gwak J.Yun J.H.
Ewha Authors
조윌렴
SCOPUS Author ID
조윌렴scopus
Issue Date
2011
Journal Title
Applied Physics Letters
ISSN
0003-6951JCR Link
Citation
vol. 99, no. 8
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
Local surface potential of Cu2ZnSnSe4 thin-films was investigated by Kelvin probe force microscopy. The surface potential profile across grain boundaries (GBs) shows a rise of 200-600 meV at GBs in a Cu-poor and Zn-poor film with 3.8 efficiency, which means positively charged GBs. In contrast, the GBs in a Cu-poor and Zn-rich film with 2 efficiency exhibit lowering of surface potential by 40 meV. The results indicate that GBs of Cu2ZnSnSe4 films play a role for exciton separation and governing defects for high efficiency could be not only CuZn but also VCu as explained theoretical predictions. © 2011 American Institute of Physics.
DOI
10.1063/1.3626848
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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