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Nanocrystalline graphite growth on sapphire by carbon molecular beam epitaxy

Title
Nanocrystalline graphite growth on sapphire by carbon molecular beam epitaxy
Authors
Jerng S.K.Yu D.S.Kim Y.S.Ryou J.Hong S.Kim C.Yoon S.Efetov D.K.Kim P.Chun S.H.
Ewha Authors
윤석현
SCOPUS Author ID
윤석현scopus
Issue Date
2011
Journal Title
Journal of Physical Chemistry C
ISSN
1932-7447JCR Link
Citation
vol. 115, no. 11, pp. 4491 - 4494
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
We report the fabrication of nanocrystalline graphite films on sapphire substrates of various cutting directions by using solid carbon source molecular beam epitaxy. Raman spectra show a systematic change from amorphous carbon to nanocrystalline graphite with a cluster diameter of several nanometers, depending on the growth temperature. The symmetry of the substrate seems to have little effect on the film quality. Simulations suggest that the strong bonding between carbon and oxygen may lead to orientational disorders. Transport measurements show a Dirac-like peak and a carrier type change by the gate voltage. © 2011 American Chemical Society.
DOI
10.1021/jp110650d
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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